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. 2019 Dec 12;9:18977. doi: 10.1038/s41598-019-55031-y

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Device overview. (a) Isometric view of the device. IDEs, RTD, and electrical contacts are integrated on the top surface of the SiN membrane. Inlet/outlet tubing is mounted on the inlet/outlet holes (not shown). IDEs, RTD, and electrical contacts are electrically isolated from the channel by the 500 nm thick SiN membrane. (b) Channel side of the device. Silicon is etched to form the main channel and inlet/outlet with feed through. A 1 mm thick PDMS is placed to complete the channel. (c) Cross-sectional view of the device showing the channel and IDEs/RTD. (d) Close-up optical photograph of the top view of IDEs and RTD on the SiN membrane.