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. 2019 Dec 12;10:5672. doi: 10.1038/s41467-019-13676-3

Fig. 3. Patterning accuracy of OPN.

Fig. 3

a Schematic illustration of the 1D assembly of seven 500 nm SiNPs. b Dark-field image of SiNPs before patterning. The white dashed arrows indicate the target positions of each SiNPs. c Optical image of SiNPs after 1D assembly. d SEM image of SiNPs after 1D assembly. The inset defines the method to determine the position error S for individual SiNPs. e Position errors for each SiNPs in the line. The shaded area shows the average deviation from the target line, which is ~80 nm. f, g Schematic illustration and dark-field image of a 2D assembly of nine 500 nm SiNPs into a 3 × 3 array. h SEM image of the 2D assembly. i The position error in X (SX) and Y (SY) for individual SiNPs. j Position errors in X and Y for each SiNPs in the 2D array. The shaded area indicates the average deviation from the target positions, which is ~200 nm. Scale bars: b–d 10 μm; inset in d, 1 μm; g, h, 5 μm; i, 500 nm.