Fig. 1. SWCNT growth mode without enough etching agents.

(A) Growth model for SWCNT growth in the absence of sufficient etching agents. (B) In the growth regime, the SWCNT growth rate (R_T), active sites for carbon incorporation (N_ACT), and catalyst surface carbon concentration (c) plots against the tube chiral angle. (C) Carbon concentration as a function of the SWCNT chiral angle at different fluxes of carbon deposition. The threshold carbon concentration (c_th) for catalyst encapsulation is indicated by the red line. (D) The chirality-selective growth of SWCNTs as a function of c_min/c_th, where the dark zone indicates the SWCNTs can survive under different carbon fluxes.