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. 2019 Dec 13;9:19134. doi: 10.1038/s41598-019-55628-3

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Schematics of the possible resistive switching mechanism. (a) Before the electroforming process, there is no filament formed in the LNO thin film (Initial State), and Schottky-like barriers are formed at both top and bottom interfaces. (b) In LRS, the filament is formed and connected to the Pt bottom electrode, and the bottom Schottky-like barrier is turned to a resistor. (c) In HRS, the filament is disconnected to the Pt bottom electrode, and the bottom Schottky-like barrier is recovered.