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. 2019 Dec 17;9:19316. doi: 10.1038/s41598-019-55637-2

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Schematic diagram of the energy-level bands for the WS₂ NSs:PMMA/ITO/PEN memristive device without applied bias. Schematic diagrams of the carrier transport mechanisms in the LRS writing processes when (b) a low bias voltage (0–0.8 V) and (c) a high bias voltage (0.8–2.5 V) are applied. (d) Schematic diagram of the carrier transport mechanisms in the HRS erasing process. The work functions of the ITO film and the Al electrode are −4.8 and −4.3 eV, respectively. The highest occupied molecular orbital level of PMMA is −7.8 eV, and the lowest unoccupied molecular orbital level is −1.8 eV.