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. 2019 Dec 20;5(12):eaax6061. doi: 10.1126/sciadv.aax6061

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Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

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Fig. 6 — (A) Simulated I-V characteristics of the device geometry used in our experiments, assuming no external series/shunt resistances. (B) Simulated V_OC, J_SC, fill factor (FF), and power conversion efficiency (PCE) for optimized devices. Apart from the final device geometry (“Optimized WS₂ device”), optimizations are independent, not cumulative. (C) Simulated I-V characteristics of the fully optimized WS₂ device.