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. 2019 Nov 29;19(23):5248. doi: 10.3390/s19235248

Figure 6.

Figure 6

Typical current–voltage characteristics obtained for the chip after two years of storage. Experimental conditions: 1 mM potassium phosphate buffer, Vg from 0 to 60 V, Vds = 0.1 V, solution volume in the cell: 300 μL; chip with 3-µm-wide SOI-NWs of n-type conductance.