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. 2019 Nov 6;22:58–69. doi: 10.1016/j.isci.2019.11.004

Figure 2.

Figure 2

The Physical Mechanism Based on Dynamic PN Junction Capacitance under the Built-in Electric Field in Dynamic PN Junctions

(A) The schematic diagram of the dynamic P-Si/N-GaAs generator.

(B) The J-V curve of the dynamic P-Si/N-GaAs junction with a 6.0 N force. The contact area is 1.0 mm2. Green: The basal J-V curve of dynamic PN junction. Blue: The J-V curve of static PN junction.

(C) The band diagram and carrier dynamic process of the dynamic P-Si/N-GaAs generator.

(D) The band diagram and carrier dynamic process of the dynamic P-Si/SiO2/N-GaAs generator.

(E) The Voc and Isc of the dynamic P-Si/N-GaAs generator with a 6.0 N force, a speed of 5.0 cm/s, and SiO2 thickness of 0/9/13/20/50/100/200 nm. The work area of the P-Si/N-GaAs junction is 1.0 mm2. Both the Voc and Jsc are average value of voltage and current output.

(F) The E and Jsc of the dynamic P-Si/N-GaAs generator with SiO2 thickness of 0/9/13/20/50/100/200 nm. The inset is the simulation of the experimental current density as a function of electric field.

All data represent the mean ± SEM. For the line chart in (E), voltage and current were obtained using repeated measures.