Figure 3.

The Confirmatory Experiment Based on Dynamic P-i-N Junctions

(A) The V_oc of the dynamic P-Si/100 nm-SiO₂/N-GaAs generator in one-series, two-series, and three-series with a 6.0 N force, a speed of 5.0 cm/s. Inset: The schematic image of series connection of the dynamic PN junctions.

(B) The voltage and current output of dynamic MoS₂/Si generator with different resistivity of Si substrate.

(C) The relationship between the voltage output and interface barrier height.

(D) One-dimensional band alignment of conduction and valence band edges for various dielectric layers (SiO₂, Al₂O₃, ZnO, HfO₂, AlN, Graphene) and semiconductors (Si, MoS₂).

(E) The band diagram and carrier dynamic process of the dynamic P-Si/AlN/MoS₂ generator.

All data represent the mean ± SEM. For the line chart in (B), voltage and current were obtained using repeated measures.