Symbol |
Description |
Value |
θ |
Neuron’s Preferred Orientation |
(−90,90)degree |
θ_stimulus |
Test Orientation |
(−90,90)degree |
VL
|
Leak Reversal Potential |
−70.0 mV |
Vth
|
Threshold Potential |
−50.0 mV |
Vreset
|
Reset Potential |
−55.0 mV |
Excitatory Neurons |
NE
|
Number of Pyramidal Neurons |
1000 |
Cm
|
Membrane Capacitance |
0.5 nF |
gLE
|
Total Leak Conductance |
25.0 nS |
τrE
|
Refractory Time |
2.0 mS |
Inhibitory Neurons |
NI
|
Number of Interneurons |
250 |
Cm
|
Membrane Capacitance |
0.2nF |
gLI
|
Leak Reversal Potential |
20.0 nS |
τrI
|
Refractory Time |
1.0 ms |
VI
|
Potential |
0.0 mV |
AMPA Receptor |
τAMPA
|
Exponential Decay Time Constant of AMPA currents |
2.0 mS |
EAMPA
|
Synaptic Reversal Potential |
0.0 mV |
gext−E
|
Conductance from External to Pyramidal Neurons |
2.1 nS |
gext−I
|
Conductance from External to Interneuron Neurons |
1.62 nS |
gAMPA−E
|
Conductance from Pyramidal to Interneuron Neurons |
0.04 nS |
gAMPA−E
|
Conductance from Pyramidal to Pyramidal Neurons |
0.05 nS |
GABA Receptor |
τGABA
|
Exponential Decay Time Constant of GABA Currents |
5.0 ms |
EGABA
|
Synaptic Reversal Potential |
−70.0 mV |
gGABA–I
|
Conductance to Interneuron Neurons |
1.3 nS |
gGABA–E
|
Conductance to Pyramidal Neurons |
1.0 nS |
NMDA Receptor |
τNMDA
|
Decay Time of NMDA Currents of NMDA Currents |
100.0 ms |
ENMDA
|
Synaptic Reversal Potential |
0.0 mV |
gNMDA–E
|
Conductance to Pyramidal Neurons |
0.165 nS |
gNMDA–I
|
Conductance to Interneuron Neurons |
0.13 nS |
τX
|
Controls The Rise Time of NMDAR Channels |
2.0 |
α |
Controls The Saturation Properties of NMDA Channels |
0.5 kHz |
a |
Control The Voltage Dependence of NMDA Channel |
0.062 mV |
b |
Control The Voltage Dependence of NMDA Channel ([Mg2+] = 1 mM |
1/3.57 |