. 2019 Dec 27;9:20055. doi: 10.1038/s41598-019-56457-0

Table 2.

Materials for the bottom junction of MJSC for use in terrestrial applications.

Reference substrate	E_G^J1	Material for bottom junction	Comments
III-V on III-V or IV substrate
GaAs	E_C = 0.93 eV	In_0.11Ga_0.89N_0.04As_0.96	LM
		GaAs_0.71Sb_0.29	LMM (2.3%)
		In_0.36Ga_0.64As	LMM (2.6%)
	E_B = 1.12 eV	In_0.05Ga_0.95N_0.018As_0.982	LM
		GaAs_0.84Sb_0.16	LMM (1.3%)
		In_0.21Ga_0.79As	LMM (1.5%)
	E_A = 1.34 eV	In_0.01Ga_0.99N_0.003As_0.997	LM
		GaAs_0.96Sb_0.04	LMM (0.3%)
		In_0.05Ga_0.95As	LMM (0.4%)
GaSb	E_E = 0.52 eV	In_0.16Ga_0.84As_0.14Sb_0.86	LM
		InSb_0.34P_0.66	LMM (0.3%)
		In_0.92Al_0.18As	LMM (1.1%)
		InAs_0.83P_0.17	LMM (1.1%)
		In_0.76Ga_0.24As	LMM (2.2%)
		In_0.37Ga_0.63Sb	LMM (2.3%)
	E_D = 0.70 eV	In_0.02Ga_0.98As_0.02Sb_0.98	LM
		In_0.05Ga_0.95Sb	LMM (0.3%)
		InSb_0.25P_0.75	LMM (1.2%)
		In_0.83Al_0.17As	LMM (1.7%)
		InAs_0.65P_0.35	LMM (1.7%)
	E_C = 0.93 eV	Al_0.17Ga_0.83As_0.01Sb_0.99	LM
		Al_0.14Ga_0.86Sb	LMM (0.1%)
		InSb_0.15P_0.85	LMM (2.2%)
		In_0.73Al_0.27As	LMM (2.4%)
		InAs_0.42P_0.58	LMM (2.4%)
	E_B = 1.12 eV	Al_0.32Ga_0.68As_0.03Sb_0.97	LM
	E_B = 1.12 eV	Al_0.29Ga_0.71Sb	LMM (0.2%)
	E_E = 1.34 eV	Al_0.46Ga_0.54As_0.04Sb_0.96	LM
	E_E = 1.34 eV	Al_0.53Ga_0.47Sb	LMM (0.3%)
Ge	E_C = 0.93 eV	In_0.12Ga_0.88N_0.04As_0.96	LM
		GaAs_0.71Sb_0.29	LMM (2.2%)
		In_0.36Ga_0.64As	LMM (2.5%)
	E_B = 1.12 eV	In_0.058Ga_0.942N_0.017As_0.983	LM
		GaAs_0.84Sb_0.16	LMM (1.2%)
		In_0.21Ga_0.79As	LMM (1.4%)
	E_E = 1.34 eV	In_0.02Ga_0.98N_0.002As_0.998	LM
		GaAs_0.96Sb_0.04	LMM (0.2%)
		In_0.05Ga_0.95As	LMM (0.3%)
InAs	E_A = 0.52 eV	In_0.26Ga_0.74As_0.32Sb_0.68	LM
		InAs_0.77Sb_0.07P_0.16	LM
		InSb_0.34P_0.66	LMM (0.3%)
		In_0.92Al_0.18As	LMM (0.5%)
		InAs_0.83P_0.17	LMM (0.5%)
		In_0.76Ga_0.24As	LMM (1.6%)
	E_D = 0.70 eV	In_0.09Ga_0.91As_0.17Sb_0.83	LM
		InAs_0.61Sb_0.12P_0.27	LM
		In_0.05Ga_0.95Sb	LMM (0.9%)
		InSb_0.25P_0.75	LMM (0.6%)
		In_0.83Al_0.17As	LMM (1.1%)
		InAs_0.65P_0.35	LMM (1.1%)
	E_C = 0.93 eV	InAs_0.35P_0.45Sb_0.2	LM
		Al_0.14Ga_0.86Sb	LMM (0.7%)
		InSb_0.15P_0.85	LMM (1.6%)
		In_0.73Al_0.27As	LMM (1.7%)
		InAs_0.42P_0.58	LMM (1.8%)
	E_B = 1.12 eV	InAs_0.13P_0.6Sb_0.27	LM
		Al_0.36Ga_0.64Sb	LMM (0.9%)
		In_0.65Al_0.35As	LMM (2.3%)
		InSb_0.08P_0.92	LMM (2.3%)
		InAs_0.23P_0.77	LMM (2.4%)
	E_E = 1.34 eV	Al_0.53Ga_0.47Sb	LMM (1.0%)
	E_E = 1.34 eV	In_0.56Al_0.44As	LMM (2.8%)
InP	E_A = 0.52 eV	In_0.72Ga_0.28As	LMM (1.3%)
		In_0.92Al_0.18As	LMM (2.7%)
		InAs_0.83P_0.17	LMM (2.7%)
	E_D = 0.70 eV	In_0.44Ga_0.56As_0.91Sb_0.09	LM
		In_0.05Ga_0.95As_0.55Sb_0.45	LM
		In_0.57Ga_0.43As	LMM (0.2%)
		In_0.83Al_0.17As	LMM (2.1%)
		InAs_0.65P_0.35	LMM (2.1%)
		InSb_0.25P_0.75	LMM (2.6%)
	E_C = 0.93 eV	In_0.7Ga_0.3As_0.64P_0.36	LM
		In_0.53Ga_0.31Al_0.16As	LM
		In_0.36Ga_0.64As	LMM (1.2%)
		InAs_0.42P_0.58	LMM (1.3%)
		In_0.73Al_0.27As	LMM (1.4%)
		GaAs_0.71Sb_0.29	LMM (1.5%)
		InSb_0.15P_0.85	LMM (2.2%)
	E_B = 1.12 eV	In_0.84Ga_0.16As_0.34P_0.66	LM
		In_0.53Ga_0.18Al_0.29As	LM
		InAs_0.23P_0.77	LMM (0.7%)
		InSb_0.25P_0.75	LMM (0.8%)
		In_0.65Al_0.35As	LMM (0.9%)
		In_0.21Ga_0.79As	LMM (2.2%)
		GaAs_0.84Sb_0.16	LMM (2.5%)
	E_E = 1.34 eV	In_0.99Ga_0.01As_0.02P_0.98	LM
		In_0.52Ga_0.06Al_0.42As	LM
		InAs_0.01P_0.99	LMM ( < 0.1%)
		InSb_0.01P_0.99	LMM (0.1%)
		In_0.56Al_0.44As	LMM (0.3%)
II-VI on III-V or IV substrate
GaAs	E_B = 1.12 eV	CuIn(Te_0.34S_0.66)₂	LMM (1.5%)
		CuIn(Se_0.83S_0.17)₂	LMM (1.5%)
		CuIn_0.83Ga_0.17Se₂	LMM (1.8%)
	E_E = 1.34 eV	CuIn(Se_0.37S_0.63)₂	LMM (0.6%)
		CuIn_0.45Ga_0.55Se₂	LMM (0.7%)
		CuIn(Te_0.13S_0.87)₂	LMM (0.8%)
		CuIn_0.75Al_0.25Se₂	LMM (1.5%)
Ge	E_B = 1.12 eV	CuIn(Te_0.34S_0.66)₂	LMM (1.4%)
		CuIn(Se_0.83S_0.17)₂	LMM (1.4%)
		CuIn_0.83Ga_0.17Se₂	LMM (1.7%)
		CuIn_0.93Al_0.07Se₂	LMM (2.0%)
	E_E = 1.34 eV	CuIn_0.45Ga_0.55Se₂	LMM (0.6%)
		CuIn(Se_0.37S_0.63)₂	LMM (0.7%)
		CuIn(Te_0.13S_0.87)₂	LMM (0.9%)
		CuIn_0.75Al_0.25Se₂	LMM (1.4%)
Other configurations
Si	E_B = 1.12 eV	Si
Any	E_B = 1.12 eV	CuIn_0.93Al_0.07Se₂
		CuIn_0.83Ga_0.17Se₂
		CuIn(Se_0.83S_0.17)₂
		CuIn(Te_0.34S_0.66)₂
	E_E = 1.34 eV	CuIn_0.75Al_0.25Se₂
		CuIn_0.45Ga_0.55Se₂
		CuIn(Se_0.37S_0.63)₂
		CuIn(Te_0.13S_0.87)₂

Proposition of materials to compose the bottom junction of MJSC according to the optimum values for E_G^J1. The percentage of lattice mismatching according to the reference substrate is indicated in brackets.