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. 2019 Dec 10;5(12):1959–1964. doi: 10.1021/acscentsci.9b01006

Figure 2.

Figure 2

Conductive 2D MOF devices of Ni3(HITP)2. (a) SEM of a single rod Ni3(HITP)2 device with Ti/Pd contacts. Scale bar, 1 μm. (b) Current–voltage plots of a single rod Ni3(HITP)2 device at 295 K (red) and 1.4 K (blue). Inset: Normalized magnetoresistance at several fixed temperatures. (c, d) 4-probe temperature-dependent conductance (solid line; left axis) of a single rod device (c) and a polycrystalline film device (d) of Ni3(HITP)2 and their corresponding Zabrodskii plots with their reduced activation energy (dotted lines; right axes). Inset: Temperature-dependent conductance plotted with linear axes.