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. 2019 Dec 30;9:20338. doi: 10.1038/s41598-019-56692-5

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) A schematic of resonant modulators clad with HUDS in p+pinn+ configuration. The top view illustrates waveguide-coupled cavity clad with HUDS, and positions of doping regions. (b) Side view of the device illustrating approximate distributions of p (Boron) and n (Phosphorus) dopants. (c) HUDS resonant cavity design. (d) Top: Pseudo-color display of simulated electron density (log scale in C·cm⁻³) and bottom: the pseudo-color display of simulated index of refraction distribution (linear scale) for the p+pinn+ device as a function of the magnitude of the applied voltage.