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. 2019 Dec 30;14:396. doi: 10.1186/s11671-019-3227-0

Table 2.

Structural parameters for the absorption layer of the investigated devices

Structural information for the absorption layer
Device number Doping type, doping concentration, thickness Device number Doping type, doping concentration, thickness
Device M1 N, 1 × 1015 cm−3, 0.2 μm Device B1 N, 5 × 1014 cm−3, 0.5 μm
Device M2 N, 1 × 1015 cm−3, 0.4 μm Reference device N, 1 × 1015 cm−3, 0.5 μm
Reference device N, 1 × 1015 cm−3, 0.5 μm Device B2 N, 5 × 1015 cm−3, 0.5 μm
Device M3 N, 1 × 1015 cm−3, 0.6 μm Device B3 N, 1 × 1016 cm−3, 0.5 μm
Device M4 N, 1 × 1015 cm−3, 0.8 μm Device B4 N, 5 × 1016 cm−3, 0.5 μm