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. 2020 Jan 2;11:51. doi: 10.1038/s41467-019-13827-6

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© This is a U.S Government work and not under copyright protection in the U.S; foreign copyright protection may apply 2020

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Fig. 2 — a Scanning electron micrograph cross-sectional image of the NbO_x device. b–f The elemental mapping of the materials in the system for Si, O, Nb, N, and Ti, respectively. g, h Zoom-in views of the channel locations. i The diffraction pattern extracted by Fourier transform of h. j Energy dispersive spectra (EDS) of line scans of the channel. k Two switching cycles under triangular waves with 2.5 V/100 µs ramp rate.