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. 2020 Jan 2;11:51. doi: 10.1038/s41467-019-13827-6

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© This is a U.S Government work and not under copyright protection in the U.S; foreign copyright protection may apply 2020

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Fig. 3 — a Schematic of the ASAN. A resistor R_c (75 kΩ) and a NbO_x memristor with parallel parasitic capacitance are combined together (R_HRS >> R_c >> R_LRS). In real applications, the voltage on NbO_x top electrode serves as the output spiking signal. The parasitic capacitor (C_parasitic) is tested to be about 20 pF. b The oscillation behavior of the ASAN. For the sake of simplicity, the current flowing through the memristor is measured as the response. The charging time from V_H to V_TH is defined as the integration time and the discharging time from V_TH to V_H as the relaxation time. c ASAN response under different input voltages. d Extracted mean value of spiking frequency vs. voltage in c. e Frequency response of the ASAN with triangular stimuli pulses. f The quasi-linear frequency–voltage curve extracted from e.