Table 2.

Properties of Si and SiC MOSFETs of the present and commercially available inverters.

Property	Symbol	Unit	SiC	Si	Remarks
FET ON-resistance	Rds	Ω	0.06	0.22	Almost independent of I
FET turn-on loss	Eon	μJ	70	180	Measured at Vt = 300 V, It = 10 A
FET turn-off loss	Eoff	μJ	10	120	Measured at Vt = 300 V, It = 10 A