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. 2020 Jan 3;11:101. doi: 10.1038/s41467-019-13769-z

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — a Structure schematic of MoS₂ phototransistors with the ferroelectric HZO thin film in the gate dielectric stack. b Optical microscope photograph of the device with MoS₂ channel length of 3 μm, width of 15 μm. Scale bar, 5 μm. The inset is the atomic force microscope (AFM) imaging of the multilayer MoS₂ flake, and the thickness of MoS₂ is measured as 6.3 nm (9 layers). c Transmission electron microscopy (TEM) imaging of the channel and gate of the device is in order with MoS₂/Al₂O₃/HZO/TiN layers. Interfaces of all layers are clear and flat. Scale bar, 10 nm. d Energy dispersive X-ray spectroscopy (EDS) elemental mapping of Mo, S, Al, Hf, Zr and Ti, corresponding to MoS₂/Al₂O₃/HZO/TiN layers in the TEM imaging.