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. 2020 Jan 3;11:101. doi: 10.1038/s41467-019-13769-z

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — Optoelectronic properties (a response time and the ratio of photocurrent to dark current. b responsivity and detectivity) of NC MoS₂ phototransistors based on ferroelectric HZO gate dielectric engineering in this work outperform most of the previously reported MoS₂ phototransistors based on other strategies regarding methods, including surface plasmon enhancement, charge-transfer assistance and impurity/energy band engineering of MoS₂.