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. 2020 Jan 3;11:103. doi: 10.1038/s41467-019-13437-2

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a The donor layer is illuminated at one end, generating photoexcited carriers that diffuse to the acceptor layer at the other end. The bulk homojunction provides distinct physical paths for each class of charge carrier, enabling efficient carrier transport with minimized nonradiative recombination. b PL intensity with different thicknesses of bulk homojunction (donor) film. c Normalized acceptor PL intensity as a function of donor layer thickness (dot). Fits to data (solid line) indicate the enhancement in the carrier diffusion length (dotted line) in bulk homojunction film compared with n-type and p-type CQD films. The average (symbols) and standard deviation (error bars) are calculated from a sample of three CQD films in each case.