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. 2020 Jan 3;11:103. doi: 10.1038/s41467-019-13437-2

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a, b Schematic illustration of photoexcited carrier transfer in n-type (E_g = 980 nm)–n-type (E_g = 1090 nm) blend CQD film (a), and p-type (E_g = 980 nm)–n-type (E_g = 1090 nm) blend film (b), when narrower E_g CQDs are selectively populated by pump. c, d Transient absorption (TA) maps reveal that blending the same type of CQDs does not show carrier transfer due to type-I heterojunction formation (c), whereas blending different types of CQDs exhibits hole transfer owing to formation of type-II heterojunction (d). e, f TA spectral kinetic traces of bandedge exciton bleaching signals at each E_g position for (c) and (d), respectively.