Table 2.

Dopants and properties of 2D pnictogen FETs.

Dopant		Device mobility (cm2/V s)	Stability	Ref.
Metallic atom	Li	147	6 weeks	[151]
	K	262 (e)	/	[148]
	Al	1495 (e)	10 days	[145, 146]
	Cu	690 (h)	/	[152]
	MoO3	~200 (h)	/	[153]
	Cs2Co3	27 (e)	/	[153]
Nonmetallic atom	Carbide	1995 (h)	/	[113]
	O	347 (h)	2 weeks	[137]
	S	607	3 weeks	[150]
	Te	818 (h)	3~4 weeks	[112]
	Se	756 (h)	At least 6 days	[149]
	SixNy	956 (h)	1 month	[154]
Molecule	TCNQ	/	/	[155]
	BV	/	/	[156]
	TTF	/	/	[141]