Figure 1.

The h-BN-encapsulated MoS₂ synaptic transistor for neuromorphic engineering. (a) Schematic of h-BN-encapsulated MoS₂ synaptic transistor. (b) Schematic diagram of biological neurons and synapses as a bridge of neuronal connections. (c) False-color SEM image of h-BN-encapsulated MoS₂ synaptic transistor. (d) The Raman mapping of h-BN-encapsulated MoS₂ synaptic transistor at 405 cm⁻¹, where the black and gray dashed areas represent the h-BN/MoS₂ overlap region and channel MoS₂, respectively. (e) Raman shift of the MoS₂ characteristic peak is 385,405 cm⁻¹. (f) A significant peak was observed in the PL spectrum of MoS₂ at 1.88 eV photon energy, which is consistent with the band gap of multilayer MoS₂.