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. 2020 Jan 9;11:159. doi: 10.1038/s41467-019-13946-0

Fig. 1. Crystal and electronic structures of Pb(111) thin film on TlBiSe2.

Fig. 1

a Heterostructure consisting of Pb and TlBiSe2. b Comparison of Brillouin zone between TlBiSe2 (red) and Pb (green). c Plot of ARPES intensity at EF as a function of in-plane wave vector (namely, Fermi surface) around the ΓM¯ line for pristine TlBiSe2, measured with the He-Iα line ( = 21.218 eV). d ARPES-derived band structure along the ΓM¯ cut for pristine TlBiSe2. Inset shows the ARPES intensity with enhanced color contrast in the area enclosed by white rectangle. e, f Same as c and d but for 17ML-Pb/TlBiSe2. g, h Same as e and f but for 17ML-Pb/Si(111). SS, CB, DP, and QWS denote the surface state, conduction band, Dirac point, and quantum well state, respectively. Arrows in d indicate the location of CB and DP. Dashed gray curves are a guide for the eyes to trace the SS and QWSs. Insets to d, f, and h are the LEED patterns of the respective films.