Table 2.

Bent crystal parameters for $\mathrm{Si}$ and $\mathrm{Ge}$ optimized using charm baryon decays, for the two possible experimental scenarios under consideration. The intervals give approximate regions whose uncertainties on the d factor are increased by 20% with respect to the minimum, whereas the central values are chosen for the sensitivity studies discussed in Sect. 6

	S1		S2
	$\mathrm{Si}$	$\mathrm{Ge}$	$\mathrm{Si}$	$\mathrm{Ge}$
L $[\mathrm{cm}]$	[6, 12]	[4, 8]	[8, 15]	[5, 12]
	7	5	12	7
${\mathit{\theta }}_C$ $[\mathrm{mrad}]$	[13, 16]	[13, 16]	[5, 9]	[6, 12]
	14	15	7	8
$R/R_c$	2.85	3.33	9.77	8.75