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. 2020 Jan 13;11:232. doi: 10.1038/s41467-019-14141-x

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 2 — a The schematic of the device for horizontal magnetic field. b Simulated magnetic field distribution on the top surface of the SS mesh under horizontal magnetic field. c Fluorescence images of the GUVs colonies formed under horizontal magnetic field. The right image is the enlarged image in the yellow dash box of the left image. d The schematic of the device for inclined magnetic field (with directions between the vertical and horizontal magnetic fields) by putting the SS mesh on one side of the top of the magnet. e Simulated magnetic field distribution at the bottom surface of the SS mesh under inclined magnetic field. f Fluorescence images of the GUVs colonies under inclined magnetic field. The right image is the enlarged image in the yellow dash box of the left image. The dash circles in b, c, e, and f indicate the microwells. The scale bars in c and f are 200 μm.