Fig. 2.
Stamping technique for aligned CNxCNT growth with tunable dimensions. (A) Process flow of the stamping technique for patterning CNxCNT arrays. (B) SEM of iron-rich particles (top row) and CNxCNT (bottom row) before and after CVD synthesis. [Scale bar: 100 nm (top row); 100 nm (bottom row).] (C) Density and diameter of iron-rich particles and CNxCNTs under different precursor concentrations. (D) Tunable ITD of aligned CNxCNT array growing under different precursor concentrations.