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. 2020 Jan 20;10:658. doi: 10.1038/s41598-019-57310-0

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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ToF-SIMS analysis of a p(i)n structure in a solar cell. (a) 3d point diagram of the spatial resolved dopant concentrations of boron and phosphorous in a volume with an area of 140 × 140 µm² and a depth of 314 nm. (b) Summed doping concentration over volume in Fig. 10a above a depth of 100 nm. The grey solid lines show exponential fits to the data in the formally intrinsic region to quantify the inter-diffusion. (c,d) Depth profiles of the boron and phosphorous concentration determined by ToF-SIMS and ECV measurements. The difference in position in z-direction of the decrease of the dopant concentrations need to be investigated further. The resolution limits of the different TOF-SIMS measurements are marked by black dotted lines.