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. 2020 Jan 20;10:658. doi: 10.1038/s41598-019-57310-0

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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J-V analysis of the p(i)n test structures. (a) J-V curves of p(i)n diodes with different width of the (i) poly-Si region. The MPP and J_rec refer to the record solar cell with an initially 30 µm-wide intrinsic region. (b) Current per cell area J through the p(i)n diodes at a voltage of 0.64 V (representative for the maximum power point of our solar cells) as a function of the designated width of the intrinsic region. The different colors indicate three identical test structures on different wafers.