Table 2.

Etch pit areal density (EPD) in the interface oxide of a p⁺, n⁺ and iPOLO junction after appropriate etching times.

Doping type	Resistivity [Ω cm]	EPD [cm−2]	J0 [fA/cm2]	Etching time [min]
i poly-Si	1.3	2.6 ± 0.1 × 106	2900	4
i poly-Si	80	2.8 ± 0.2 × 106	540	5
n+ poly-Si	80	1.0 ± 0.6 × 108	6	1
p+ poly-Si	80	1.96 ± 0.09 × 107	5	5