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a) B‐BiVO4 photoanode preparation. b) Photocurrent–potential (J–V) curves of bare BiVO4 and B‐BiVO4 photoanodes under AM 1.5 G simulated sunlight at 100 mW cm−2 in a 0.5 m borate buffer (pH 9.3). Scan rate: 10 mV s−1. c) Transient photocurrents for BiVO4 and B‐BiVO4 photoanodes measured at 0.7 VRHE. d) Applied bias photon‐to‐current efficiencies (ABPEs) of BiVO4 and B‐BiVO4 photoanodes. e) Incident photon‐to‐current efficiencies (IPCEs) of BiVO4 and B‐BiVO4 photoanodes at 0.7 VRHE.
