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. 2019 Nov 8;58(52):19027–19033. doi: 10.1002/anie.201911303

Figure 4.

Figure 4

a) Mott–Schottky plots of BiVO4 and B‐BiVO4 photoanodes measured in a 0.5 m borate buffer at pH 9.3 in dark. b) Electrochemical impedance spectra (EIS) of BiVO4 and B‐BiVO4 photoanodes measured at 0.7 VRHE. c) J–V curves of BiVO4 and B‐BiVO4 photoanodes for sulfite oxidation measured in a 0.5 m borate buffer (pH 9.3) containing 0.5 m Na2SO3 (hole scavenger). d) Charge transfer efficiencies at the semiconductor/electrolyte interface (η transfer) of BiVO4 and B‐BiVO4 photoanodes. e) Open circuit potentials (UOC) of BiVO4 and B‐BiVO4 photoanodes under dark (solid) and illumination (hollow); inset: transient photovoltage response within immediate illumination. f) Transient photocurrents measured at 0.7 VRHE for BiVO4 and B‐BiVO4.