Table 1.

$T_{ALD}$ is the deposition temperature; $d$ is film thickness; $R_{\max }$ is the resistance at the maximum of $R\left(T\right)$; $R_{77}$ is the resistance per square at $T=77$ K; $T_c$ is the critical temperature determined from the SF-fits; $T_{BKT}$ is BKT transition temperature; $D$ is the diffusion coefficient $D=0.882\cdot T_c$/$\left(e{B}_{c2}\right)$ (see Fig. 2 in SI for $B_{c2}$); $n$ is the Hall carrier density (see SI). In all investigated Nb_1−xTi_xN films the mean free path is very small (same order as lattice constant), so all samples are in dirty limit $l<{\xi }_0$. Films S3-1, S3-2 and S3-3 are same films as S3-4, but that have degraded with time.

Sample Nb${}_{1-x}$Ti${}_x$N		$\mathit{d}$ (nm)	${\mathit{R}}_{\mathbf{max}}$ (k$\mathrm{\Omega }$)	${\mathit{R}}_{\mathbf{77}}$ (k$\mathbf{\Omega }$)	${\mathit{T}}_{\mathbf{c}}$ (K)	${\mathit{T}}_{\mathbf{BKT}}$ (K)	D $\frac{{\mathbf{cm}}^{\mathbf{2}}}{\mathit{s}}$	n $\frac{{\mathbf{10}}^{\mathbf{22}}}{{\mathbf{cm}}^{\mathbf{3}}}$
Set-1, x = 0.3 TALD = 450 °C	S1-1	3	3.96	2.56	0	0	—	—
	S1-2	10	0.75	0.69	4.85 ± 0.005	4.79 ± 0.005	—	—
	S1-4	20	0.18	0.17	6.26 ± 0.005	6.11 ± 0.005
Set-2, x = 0.3 TALD = 350 °C	S2-1	10	17.55	4.52	0	0	—	0.5
	S2-2	12	5.65	2.85	2 ± 0.005	1.75 ± 0.005	—	—
	S2-3	15	2.66	1.69	3.27 ± 0.005	3.08 ± 0.005	0.2	—
	S2-5	40	0.52	0.77	4.33 ± 0.005	4.18 ± 0.005	—	—
Set-3, x = 0.33 TALD = 350 °C	S3-1	9.2	17.9	—	—	0	—	—
	S3-2	9.2	15.72	—	—	0	—	—
	S3-3	9.2	15.18	5.75	0.75 ± 0.005	0	—	—
	S3-4	9.2	14.13	—	0.97 ± 0.005	0	—	—
	S3-5	10	9.26	4.53	1.7 ± 0.005	0	—	—
	S3-7	12	2.24	1.87	3.85 ± 0.005	3.81 ± 0.005	—	—
	S3-9	19	1.87	0.98	4.28 ± 0.005	4.26 ± 0.005	0.3	1
	S3-10	21	0.8	0.69	4.35 ± 0.005	4.29 ± 0.005	—	—