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p‐Doping effect of V‐substitution to WSe2. a,b) Raman (a) and PL (b) spectra of V‐doped WSe2 monolayer at an excitation wavelength of 532 nm in terms of V‐doping concentration. c) I DS–V G curves of V‐doped WSe2 transistors under V DS = 0.5 V. d,e) On/off ratio (I −50 V/I off) and threshold voltage (d) field‐effect hole mobility and intrinsic hole carrier concentration (e) as a function of V‐doping concentration.
