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. 2020 Feb 13;10:2567. doi: 10.1038/s41598-020-59121-0

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Applied example signals for Memory Write ‘1’ and Memory Write ‘0’. Read conditions are specified in brackets.[All pulse duration = 7 ms] (b) Experimental measurements for Memory Write ‘1’ operation (program device to state ‘11’) with device’s initial state as: (i) ‘10’, (ii) ‘01’, and (iii) ‘00’. Memory Write ‘0’ operation (program device to state ‘01’) with device’s initial state as (iv) ‘11’, (v) ‘10’ and (vi) ‘00’. Blue line: transient current through OxRAM device. Black line: P1/P2/P3 (applied signals). Black square: Initial resistance state, Red circle: Final resistance state post SLIM operation. Please note in (iv,v), the transient current through OxRAM device falls due to gradual increase in non-volatile resistance with application of successive reset pulses. Note: The current scale in (i–vi) is varied for clear demonstration of gradual switching in the OxRAM device.