Figure 7.

(A) Family of simulated macroscopic gating currents evoked by a voltage protocol consisting of a test pulse to 0 mV preceded by 5 ms prepulses ranging from −160 to −20 mV (in steps of 10 mV). (B) Time courses of the mean S4 segment position, charge inside the gating pore, and force applied on the S4 segment obtained for the simulations shown in (A). (C) Plot of the gating charge obtained as the integral of the macroscopic gating current during the test pulse (gray symbols) and during the prepulse (black symbols) as a function of the prepulse voltage, for the simulations shown in (A). (D) Profiles of the probability density function of the S4 segment at the end of the 5 ms prepulse from the simulations shown in (A).