Figure 5.
MEMS process diagram of the suspended gold film. (a) LPCVD for silicon dioxide and silicon nitride layer on both sides separately, (b) Lithography and RIE to expose square windows on the backside, (c) Wet etching to remove exposed silicon substrate using KOH solution, (d) RIE to remove all the silicon nitride layer on the front side, (e) Gold film deposition of 120 nm using PVD process, and (f) Release-etching of silicon dioxide layer to complete the process with BHF solution.