Table 3.

The parameters of core–shell NW and transitions in it.

Semiconductor Material	$\mathbf{\epsilon }$	${\mathit{m}}_{\mathit{c}}$, ${\mathit{m}}_0$	${\mathit{m}}_{\mathit{h}}$, ${\mathit{m}}_0$	${\mathit{E}}_{\mathit{g}},\mathbf{eV}$	${\mathit{a}}_{\mathit{N}\mathit{W}},\mathbf{nm}$	$1\mathit{S}\left(\mathit{e}\right)\to 1\mathit{P}\left(\mathit{e}\right)$		$1\mathit{S}\left(\mathit{h}\right)\to 1\mathit{S}\left(\mathit{e}\right)$
						${\mathit{\lambda }}_2,\mathbf{\mu }\mathbf{m}$	${\mathit{\mu }}_{32},\mathbf{C}·\mathbf{m}$	${\mathit{\lambda }}_1,\mathbf{\mu }\mathbf{m}$	${\mathit{\mu }}_{12},\mathbf{C}·\mathbf{m}$
core, InAs	$12.3$	$0.026$	$0.41$	$0.35$	$9.9$	$8.04$	$5.91\times {10}^{-28}$	$2.56$	$14.9\times {10}^{-29}$
shell, ZnS	$8.3$	$0.27$	$0.58$	$3.54$	10