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. 2020 Feb 18;11:937. doi: 10.1038/s41467-020-14756-5

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — a Relative PL efficiency of the CdSe/CdS/ZnS core/shell/shell QDs in electron-only devices (ITO/TPBi (~25 nm)/QDs (~40 nm)/Zn_0.9Mg_0.1O (~60 nm)/Ag). Zn-carboxylate ligands are less reactive than Cd-carboxylate ones, and thus a constant current density of 100 mA cm⁻² is applied for the electron-only devices, instead of 10 mA cm⁻² used for the devices with the CdSe/CdS-Cd(RCOO)₂ QDs. Inset, the relative PL efficiency of the QDs in hole-only devices (ITO/PEDOT:PSS (~35 nm)/poly-TPD (~30 nm)/PVK (~5 nm)/QDs (~40 nm)/CBP (~25 nm)/MoO_x/Au) driven at a constant current density of 30 mA cm⁻², sharing the same coordinate axes with the main plot. b, Relative PL efficiency of the CdSe/CdS/ZnS core/shell/shell QDs in QLEDs driven at a constant current density of 100 mA cm⁻². c EQE vs. driving voltage characteristics and d, Stability data of the QLEDs based on the CdSe/CdS/ZnS core/shell/shell QDs driven at the constant-current mode. e The IQE/PL QY ratio (IQE of the QLED divided by PL QY of the QD film) for the CdSe/CdS core/shell and the CdSe/CdS/ZnS core/shell/shell QDs with different ligands.