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. 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771

Figure 2.

Figure 2

Etching process of vertical nanowires: (a) vertical etching with HBr/O2/He ICP etcher; (b) atomic layer etching: cyclic self-limited oxidation and selective etching of SiGe oxides achieve atomic layer etching accuracy; (c) vertical SiGe nanowires with nanometer diameter formed by multiple cycle etching.