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. 2020 Jan 27;13(3):586. doi: 10.3390/ma13030586

Figure 5.

Figure 5

AFM images of (a) T4 O2 plasma, R.m.s = 0.16 ± 0.01 nm; (b) T4 Ar plasma, R.m.s = 0.16 ± 0.02 nm; (c) T4 + ZnO, R.m.s = 0.34 ± 0.02 nm; (d) T4, R.m.s = 0.24 ± 0.01; (e) Silicon substrate, R.m.s = 0.26 ± 0.02. Scanning area 3 μm × 3 μm. Line profiles of surfaces are also shown.