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. Author manuscript; available in PMC: 2020 Feb 28.

Published in final edited form as: Appl Phys Lett. 2019;115(7):10.1063/1.5100154. doi: 10.1063/1.5100154

TABLE I.

Summary of the comparative transistor performance of ML MoS₂ FETs with Ti and Pd contacts before and after the p-doping. Average of ca. 10 samples.³¹

		Mobility (cm² V⁻¹ s⁻¹)
Contacts	Treatment	Electron	Hole	I_ON/OFF	V_{T, avg} (V)	Φ_SB (meV)
Ti	Pristine	12.2 ± 1.7	...	10⁷	−54 ± 3	100^a
	10 min p-doped	0.84 ± 0.10	6.0 × 10⁻⁵	10⁶	0 ± 7	...
	1 h p-doped	0.017 ± 0.009	9.3 × 10 ⁻⁶	10⁴	...	...
Pd	Pristine	8.3 ± 0.9	...	10⁶	−25 ± 4	230^a
	10 min p-doped	1.4 × 10⁻³	2.3 ± 0.7	10⁶	40 ± 5	...
	1 h p-doped	7.4 × 10⁻⁴	0.82 ± 0.12	10⁵	75 ± 3	156^b

^a

For electron transportation.

^b

For hole transportation.