Skip to main content
. 2020 Mar 3;9:30. doi: 10.1038/s41377-020-0265-4

Fig. 1. Carrier recombination in Ge measured by optical pump/THz probe spectroscopy.

Fig. 1

a Pump-induced change in the THz transmission as a function of the pump-probe delay time for pure and Au-implanted Ge. The pump fluence is 12.5 μJ/cm2, and the wavelength is 800 nm. b Bi-exponential fits of the decay dynamics for the Ge:Au samples. The curves for the 5 × 1013 ions/cm2 dose are vertically shifted for clarity (multiplied by 2)