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. 2020 Mar 4;11:1181. doi: 10.1038/s41467-020-14872-2

Table 2.

Estimated contact area to achieve equal reprogramming and programming voltages (Vpo = Vpr) for devices highlighted in Fig. 3c, d, with g = c = w = 60 nm.

Hinge type Hinge offset (μm) Vpr = Vpo Contact area (nm2) Contact tip length for 300 nm device layer (nm)
Serpentine 1.2 750 mV 1600 5
Serpentine 0.4 1.1 V 2600 9
Straight 1.2 1.5 V 5000 17
Straight 0.4 2 V 10,000 33