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. 2020 Mar 5;11:1218. doi: 10.1038/s41467-020-14926-5

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© The Author(s) 2020

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — a Simulated dihedral distributions when π–π confinements are confined to 3 and 5 Å, respectively. The distribution broadens indicate the chains twisting at different temperatures. b Surface topographic AFM images (size: 5 µm × 5 µm) of the undoped and PZ1-doped films under thermal stress. c The one-dimensional GIWAXS line curves of the corresponding blends with respect to the OOP and IP directions. d The hole and electron mobilities of the corresponding films as a function of heating time at 150 °C. e Charge carrier lifetime obtained from TPV measurements as a function of charge carrier density (n) obtained from CE measurements under open-circuit conditions. f Normalized transient photocurrent (TPC) data for the undoped and PZ1-doped devices based on the relevant blends under thermal stress. Source data are provided as a Source Data file.