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. 2020 Mar 6;6(10):eaay2324. doi: 10.1126/sciadv.aay2324

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Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 2 — (A) Conductivity σ_BiSb of Bi_0.53Sb_0.47 plotted as a function of its thickness t_BiSb. Inset: Schematic illustration of a Hall bar device and the coordinate system. (B to D) t_BiSb dependence of the damping-like spin Hall efficiency ξ_DL (B), the SHC σ_SH (C), and the field-like spin Hall efficiency ξ_FL (D) of t_BiSb Bi_0.53Sb_0.47/t_CoFeB CoFeB. Dotted lines represent contributions from the Oersted field. All data were obtained at 300 K.