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. 2020 Mar 6;6(10):eaay2324. doi: 10.1126/sciadv.aay2324

Fig. 5. Temperature dependence of carrier transport and σSH.

Fig. 5

(A to D) Temperature dependence of the conductivity σBiSb (A), the effective carrier concentration n (B), the electron mobility μe (C), and the hole mobility μd (D) for 10 Bi1−xSbx. Heterostructures without the CoFeB layer were used. (E to G) Temperature dependence of the damping-like spin Hall efficiency ξDL (E), the SHC σSH (F), and the field-like spin Hall efficiency ξFL (G) for 10 Bi1−xSbx/2 CoFeB heterostructures. (H) σSH/n as a function of the majority carrier mobility (μe for x = 0.17 and 0.47, and μh for x = 0.65) for 10 Bi1−xSbx/2 CoFeB heterostructures. (I) Schematic illustration of the band structures of the Bi-rich Bi1−xSbx alloy with thermal broadening at low and high temperatures.