Figure 3.

Effect of mutation at F656 on I_hERG block by erythromycin (a) Representative traces for WT I_hERG (ai) and F656V I_hERG (aii) before (control) and after exposure to 600 µM erythromycin (Ery) at 37ºC, using the voltage protocols in the panels below. (b) Bar charts comparing the level of block produced by 600 µM erythromycin of WT (white bar; n = 5) and F656V (gray bar; n = 5) I_hERG tail on repolarization to −40 mV following a 2 s depolarization from −80 mV to +20 mV. Asterisks in B denote statistical significance: ** p < .01 (unpaired t test)