Figure 5: G-IV for rapid mapping of local electronic conductance.

(a) Typical I-V measurements on SPM platforms utilize a regimen where after the voltage is stepped to the new value, a delay time is introduced before the current is averaged, as shown in the inset. On the other hand, the G-IV mode utilizes sinusoidal excitation at high frequency (200 Hz in this case), with results shown for a single point on a ferroelectric PbZr_0.2Ti_0.8O₃ (PZT) nanocapacitor in (b). The raw current (I_meas), the reconstructed current (I_rec) given the resistance-capacitance (RC) circuit model, and the inferred current without the capacitance contribution (I_Bayes) are plotted. This method also allows the uncertainty in the inferred resistance traces to be determined, as shown in the respective plots of R(V) with the standard deviation shaded. White space indicates areas where the resistance is too high to be accurately determined. Reconstructing the current after the measurement can facilitate rapid mapping of switching disorder in the nanocapacitors, with the computed parameter for disorder mapped in (c). Figure is adapted from Somnath et al.¹⁷⁶