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. Author manuscript; available in PMC: 2020 Mar 12.
Published in final edited form as: Semicond Sci Technol. 2019;34(9):10.1088/1361-6641/ab37d3. doi: 10.1088/1361-6641/ab37d3

Figure 1.

Figure 1.

(a) Example of a GaAs-based device used as a QHR standard. A photo of an actual device accompanies the illustration of the heterostructure. (b) Upon magnifying the heterostructure cross-section, the AlGaAs/GaAs interface provides the region in which a 2DES can form. (c) The confinement is depicted in terms of the local band structure of the interface. The region in light blue indicates the approximate confinement in the horizontal direction, typically on the order of 10 nm.